page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures ? low vce(sat).vce(sat)=0.16v(typ.)(ic/ib=2a/0.2a) ? complements to 2sb1188 maximum ratings ( t a =25 unless otherwise noted) par a met e r symbol v a lue uni t collector - base v ol t age v cbo 4 0 v collector - emitter v ol t age v ceo 32 v emitter - base v ol t age v ebo 5 v collector cur r ent - continuous i c 2 a collector power dissi p ation p c 0.5 w junction temperature t j 150 s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherw ise specified ) parame t e r symbol t est conditions m in t yp m ax u ni collector - base breakd o w n v o l t age v cbo i c = 5 0a, i e =0 40 v collector - emitter bre a kd o w n v ol t age v ceo i c = 1 ma, i b =0 32 v emitter - b a s e breakd o w n v o l t age v ebo i e = 5 0a, i c =0 5 v collector cut - off current i cbo v cb =20 v , i e =0 1 a emitter cut - off current i ebo v eb = 4 v , i c =0 1 a dc cur r ent g a in h fe(1) v ce = 3 v , i c =500ma 82 390 collector - emitter satu r ation v o l t age v ce(sat) i c = 2 a, i b = 0 .2a 0.8 v t r a n s ition fr e qu e n c y f t v ce = 5 v , i c =50ma, f = 100mhz 100 mhz collector output ca p aci t a nce c ob v cb =10 v , i e = 0 , f = 1mhz 30 pf classification of h fe rank p q r range 8 2 - 180 120 - 270 1 80 - 390 marking d b p d b q d b r 2SD1766 ( npn ) 1. base 2. collecto sot - 89 3. emitter
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. 2SD1766 typical characteristics
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